View 2N60L-A-TA3-T_4618209.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

UNISONIC TECHNOLOGIES CO., LTD 2N60L
2 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* RDS(ON) = 5@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 2N60LL
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Package Normal Lead Free Plating 2N60L-x-TA3-T 2N60LL-x-TA3-T TO-220 2N60L-x-TF3-T 2N60LL-x-TF3-T TO-220F 2N60L-x-TM3-T 2N60LL-x-TM3-T TO-251 2N60L-x-TN3-R 2N60LL-x-TN3-R TO-252 2N60L-x-TN3-T 2N60LL-x-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube
www.unisonic.com.tw Copyright (c) 2008 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-182,A
2N60L
ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETER SYMBOL 2N60L-A 2N60L-B
Power MOSFET
RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 1) IAR 2.0 A TC = 25C 2.0 A Drain Current Continuous ID TC = 100C 1.26 A Drain Current Pulsed (Note 1) IDP 8.0 A Single Pulsed (Note 2) EAS 140 mJ Avalanche Energy 4.5 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 32 W TO-220F 9 W Total Power Dissipation PD TO-251 25 W TO-252 20 W Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Thermal Resistance Junction-Ambient PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F SYMBOL JA RATINGS 65 58 43 38 5 6 4 12 UNIT
/W
Thermal Resistance Junction-Case
Jc
ELECTRICAL CHARACTERISTICS (TJ =25 , unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 2N60L-A 2N60L-B SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250A MIN 600 650 10 100 -100 0.4 2.0 3.8 270 40 5 4.0 5 350 50 7 TYP MAX UNIT V V A nA nA V/ V pF pF pF
Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V IGSS VGS = -30V, VDS = 0V ID = 250 A, Referenced to BVDSS/ TJ 25C VGS(TH) RDS(ON) CISS COSS CRSS VDS = VGS, ID = 250A VGS = 10V, ID =1A
VDS =25V, VGS =0V, f =1MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-182,A
2N60L
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) Turn-On Rise Time tR VDD =300V, ID =2.4A, RG=25 (Note 4, 5) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=2.4A Gate-Source Charge QGS (Note , 5) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time tRR VGS = 0 V, ISD = 2.4A, di/dt = 100 A/s (Note4) Reverse Recovery Charge QRR Note: 1. Repetitive Rating : Pulse width limited by TJ 2. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25C 3. ISD 2.4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT 10 25 20 25 9.0 1.6 4.3 30 60 50 60 11 ns ns ns ns nC nC nC V A A ns C
1.4 2.0 8.0 180 0.72
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-182,A
2N60L
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
Period P.W.
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-182,A
2N60L
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-182,A
2N60L
TYPICAL CHARACTERISTICS
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate-Source Voltage, VGS (V)
Capacitance (pF)
6 of 8
QW-R502-182,A
2N60L
Drain Current, ID (A)
Drain-Source Breakdown Voltage, VDSS (Normalized)
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) (Normalized)
www.unisonic.com.tw
Power MOSFET
7 of 8
QW-R502-182,A
2N60L
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 8
QW-R502-182,A

▲Up To Search▲

Price & Availability of 2N60L-A-TA3-T

	To Download 2N60L-A-TA3-T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .